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 Power Transistors
2SB939, 2SB939A
Silicon PNP epitaxial planar type Darlington
For midium-speed power switching Complementary to 2SD1262 and 2SD1262A
10.00.3
8.50.2 6.00.5 3.40.3
Unit: mm
1.00.1
s Features
q q q
High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C)
Ratings -60 -80 -60 -80 -7 -12 -8 45 1.3 150 -55 to +150 Unit V
1.50.1
1.5max.
1.1max.
10.5min.
2.0
0.80.1
0.5max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB939 2SB939A 2SB939 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2.540.3 5.080.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.40.3 1.00.1
8.50.2
emitter voltage 2SB939A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature
V V A A W
10.00.3
6.00.3
1.5-0.4
2.0
3.0-0.2
4.40.5
0.80.1 2.540.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.080.5
C C
1 2 3
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB939 2SB939A 2SB939 2SB939A
1:Base 2:Collector 3:Emitter N Type Package (DS)
(TC=25C)
Symbol ICBO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = -60V, IE = 0 VCB = -80V, IE = 0 VEB = -7V, IC = 0 IC = -30mA, IB = 0 VCE = -3V, IC = -4A VCE = -3V, IC = -8A IC = -4A, IB = -8mA IC = -4A, IB = -8mA VCE = -10V, IC = - 0.5A, f = 1MHz IC = -4A, IB1 = -8mA, IB2 = 8mA, VCC = -50V 15 0.5 2 1
C
min
typ
max -100 -100 -2
4.40.5
Unit A mA V
-60 -80 2000 500 -1.5 -2 10000
Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE1
V V MHz s s s
Rank classification
Q P 2000 to 5000 4000 to 10000
Internal Connection
B
Rank hFE1
E
14.70.5
+0.4
+0
1
Power Transistors
PC -- Ta
50 -8 (1) 40 (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (PC=1.3W) TC=25C -7 IB=-2.0mA -1.8mA -1.6mA -1.4mA -1.2mA -1.0mA - 0.8mA - 0.6mA -3 - 0.4mA -2 -1 0 0 20 40 60 80 100 120 140 160 0 -1 -2 -3 -4 -5 - 0.2mA
2SB939, 2SB939A
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
-100
VCE(sat) -- IC
IC/IB=500
Collector power dissipation PC (W)
-30
Collector current IC (A)
-6 -5 -4
-10
30
-3
25C TC=100C
20
-1
-25C
10 (2) (3) 0
- 0.3
- 0.1 - 0.1
- 0.3
-1
-3
-10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
-100 (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25C -100
VBE(sat) -- IC
Base to emitter saturation voltage VBE(sat) (V)
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=500 -100
VBE(sat) -- IC
(1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25C
-30
-30
-30
-10
(3)
-10 TC=-25C 25C 100C
-10 (1) (2) (3)
-3 (2) -1 (1)
-3
-3
-1
-1
- 0.3
- 0.3
- 0.3
- 0.1 - 0.1
- 0.3
-1
-3
-10
- 0.1 - 0.1
- 0.3
-1
-3
-10
- 0.1 - 0.1
- 0.3
-1
-3
-10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
hFE -- IC
105
Cob -- VCB
Collector output capacitance Cob (pF)
VCE=-3V 10000 3000 1000 300 100 30 10 3 1 - 0.1 - 0.3 IE=0 f=1MHz TC=25C
Area of safe operation (ASO)
-100 -30 Non repetitive pulse TC=25C ICP -10 IC -3 -1 300ms t=1ms 10ms
Forward current transfer ratio hFE
TC=100C 104
25C
-25C
103
Collector current IC (A)
- 0.3 - 0.1 - 0.03 - 0.01 -1
102 - 0.1
- 0.3
-1
-3
-10
-1
-3
-10
-30
-100
-3
-10
-30
-100 -300 -1000
Collector current IC (A)
Collector to base voltage VCB (V)
Collector to emitter voltage VCE (V)
2
2SB939A
2SB939
Power Transistors
Rth(t) -- t
103 (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10
2SB939, 2SB939A
Thermal resistance Rth(t) (C/W)
102
1
10-1
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3


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